3英寸CdTe/Si复合衬底外延技术研究

摘要

报道了采用分子束外延法,在3 in硅衬底上通过As钝化、ZnTe缓冲层生长、CdTe生长、周期性退火等工艺进行CdTe/Si复合衬底制备技术研究情况,采用光学显微镜、X射线高分辨衍射仪、原子力显微镜、红外傅里叶光谱仪和湿化学腐蚀等手段对碲化镉薄膜进行了表征,测试分析结果表明碲化镉薄膜的晶向得到了较好的控制,孪晶得到了抑制,且具有较好晶体结构质量和均匀性.%CdTe(211 )B films were grown by molecular beam epitaxy on As-passivated nominal three -inch Si( 211 )wafer using thin interfacial ZnTe (211 )B buffer layer,and in-situ cyclic annealing has been used during CdTe deposition to improved crystal quality.The CdTe films were characterized with Optical microscopy, X-ray diffraction, AFM,FTIR and wet chemical defect etching.The results indicate that the CdTe(112) B films has good crystal quality, excellent uniformity over three-inch area,twin-free and the crystalline orientation is controlled.