Development of X-ray Imaging Sensors Based on Epitaxially Grown Thick CdTe Layers on Si Substrates

摘要

We are developing room-temperature X-ray, gamma ray detectors for spectroscopy and imaging applications with working photon energies up to 100 keV, using metalorganic vapor-phase epitaxy (MOVPE) grown thick single crystal CdTe epilayers on Si substrates. We have previously reported on spectroscopic performance of our detectors1, as well as fabrication details and performances of the (8×8) as well as (20×20) pixel imaging detectors arrays2. The detector were fabricated in a p-CdTe/n-CdTe/n+-Si heterojunction diode structure, where the pixel size was typically 1.12 × 1.12 mm~2 with a 1.27 mm pitch.