Vertical transistor on supporting contact layer - grown epitaxially on reverse of substrate with diffused base and emitter zones

摘要

A transistor consists of an n-type first zone of an n plus-or-minus type support and contact layer. A p-type zone in the former acts as the base zone, and an n plus-or-minus zone inside this zone acts as the emitter. The first zone itself is used as the collector of the transistor. Specifically, the n plus-or-minus type is grown epitaxially on the n-type first zone which acts as the substrate. A third zone of the p-type encloses an n plus-or-minus type fourth zone; both pn-junctions terminate at the main surface. The support zone can thus be grown epitaxially with a perfect monocrystalline structure on the first zone which serves as the substrate.