MMIC功率放大器中末级合成电路设计研究

摘要

This paper studies the final stage four-way synthesis circuit in the amplifier MMIC working at Ku band with the 100nm AlGaN/GaN HEMT process based on the 90μm×8 GaN HEMT as the final transistor. ADS Momentum is chosen as the simulation tool, and two kinds of final stage synthesis circuits are designed. A method to improve the amplitude consistency is proposed, and the correlated indexes are compared. In the 14GHz~16GHz frequency band, the cluster-type synthesis circuit has the maximum insertion loss of 1.1dB, its output reflection coefficient is better than –18dB, the Bus-bar circuit has the maximum insertion loss of 0.9dB and its output reflection coefficient is better than –20dB.%采用100nm AlGaN/GaN HEMT工艺,以尺寸为90μm×8的GaN HEMT作为末级晶体管,研究可工作于Ku波段的功放MMIC末级四路合成电路.选择ADS Momentum作为仿真工具,设计两种末级合成电路,并提出一种改进幅度一致性的设计方法.对两种合成电路的各项指标进行比较,在14GHz~16GHz频段,簇丛式合成电路最大插损1.1dB,输出反射系数优于–18dB;Bus-bar总线合成电路最大插损0.9dB,输出反射系数优于–20dB.