瑞红RZJ-304光刻胶光刻工艺研究

摘要

Lithography is a very important step in fabrication of semiconductor devices. In this paper , lithogra-phy process was studied to obtain the suitable parameters by using Ruihong RZJ-304 positive photoresist. This project was done by controlling exposure time , developing time , soft-baking time and so on. The optical grating was used as a mask. The result shows that mask shape was transferred to surface of silicon successfully. The pho-toresist lines were periodic array and almost the same as the optical grating mask. The thickness of the photore-sist lines was uniform. The proper lithography process for RZJ-304 photoresist was achieved successfully.%利用光刻技术对瑞红RZJ-304正性光刻胶进行光刻工艺研究，用透射式光栅作为掩模版，通过改变光刻步骤中的前烘时间、曝光时间、显影时间等来研究光刻效果。实验结果表明，掩模版图形被成功地转移到了硅片基底上，显影后光刻胶厚度均匀，光刻胶线条呈周期性排列，得到了与掩模版尺寸一致的图形。这说明得到了适合RZJ-304光刻胶的光刻工艺。