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Photoresist Polymer, Photoresist Composition Comprising the Same and Method for Forming Photoresist Pattern Using It

机译:光刻胶聚合物,包括该光刻胶聚合物的光刻胶组合物以及使用该光刻胶组合物形成光刻胶图案的方法

摘要

A photoresist polymer for preparing photoresist composition and patterning the photoresist is provided to be employed in developing a photoresist film formed of the photoresist composition with use of water, thereby simplifying production processes and saving production cost by comprising polymerization repeating units with specific formula in the photoresist polymer. The photoresist polymer comprises: polymerization repeating unit represented by a formula(1), wherein R1 is linear or branched chain alkylene having carbon atoms of 1 to 10, n is integer ranging from 1 to 10, and mole ratio of a unit to b unit ranges from 5-95 : 95-5. The photoresist polymer has weight average molecular weight ranging from 2,000 to 300,000. The photoresist composition includes the photoresist polymer as well as 0.05 to 10wt. parts of photoacid generator to 100wt. parts of the polymer, alkaline compound and solvent as a mixture of water and alcohol compound. The alkaline compound is selected from amine compound and ammonium compound.
机译:提供了一种用于制备光致抗蚀剂组合物并图案化该光致抗蚀剂的光致抗蚀剂聚合物,以用于用水冲洗由该光致抗蚀剂组合物形成的光致抗蚀剂膜,从而通过在光致抗蚀剂中包含具有特定分子式的聚合重复单元来简化生产工艺并节省生产成本。聚合物。该光致抗蚀剂聚合物包括:由式(1)表示的聚合重复单元,其中R 1为碳原子数为1至10的直链或支链亚烷基,n为1至10的整数,和单元与b单元的摩尔比。范围从5-95:95-5。光刻胶聚合物的重均分子量为2,000至300,000。该光致抗蚀剂组合物包括光致抗蚀剂聚合物以及0.05至10重量%。零件的光酸产生剂至100wt。部分聚合物,碱性化合物和溶剂为水和醇化合物的混合物。碱性化合物选自胺化合物和铵化合物。

著录项

  • 公开/公告号KR101204915B1

    专利类型

  • 公开/公告日2012-11-26

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20050065781

  • 发明设计人 이근수;

    申请日2005-07-20

  • 分类号G03F7/039;G03F7/004;

  • 国家 KR

  • 入库时间 2022-08-21 16:28:13

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