电解液中Cu2+浓度对CuInS2薄膜的影响

摘要

CuInS2 thin film,CuIn11S17 thin film and a mixture of both were formed on ITO glass substrates by sulfurizing CuIn-S precursors which were electrodeposited in the electrolytes solutions with different Cu2+ concentrations.The properties of the thin films were characterized by X-ray diffraction (XRD),scanning electron micrographs (SEM) and energy dispersive spectroscopy (EDS).The experiment results indicate that while keeping the In3+ and S2O32_ concentrations fixed,the concentration of Cu2 + has significant influence on the chemical composition,morphology and crystal structure of the resulting thin films.With a proper Cu2+ concentration,a single-phase polycrystalline CuInS2 thin film can be achieved with ideal stoichiometry and a suitable band gap of 1.5 eV,which will be used as the absorber layer of a thin film solar cell in further work.%采用硫化Cu-In-S预制层方法制备出CuInS2、CuIn11S17及两相混合共存的薄膜,其中Cu-In-S预制层通过在含有不同Cu2+浓度的电解液中电化学沉积制得.通过对薄膜的XRD、SEM及EDS的表征,发现当In3+和S2O32_浓度不变时,Cu2+浓度的改变对薄膜的性质有很大的影响.在最优的Cu2浓度下,制备出了单一的、具有理想化学计量比的、禁带宽度为1.5eV的CuInS2薄膜.这种薄膜在后续工作中有望被用作太阳能电池的吸收层.