硫化温度对CuInS2薄膜微结构和光学性能的影响

摘要

采用磁控溅射法在玻璃衬底上沉积Cu-In合金预置膜,采用固态硫源在N2气氛下硫化热处理的方法制备了CuInS2薄膜.研究了硫化温度对CuInS2薄膜的晶相结构、表面形貌和光学带隙等性能的影响.采用X射线衍射(XRD)、场发射扫描电镜(FE-SEM)、紫外-可见光谱(UV-Vis)等测试手段对薄膜的晶相结构、表面形貌、光学性能进行了表征.结果表明,Cu-In合金预置膜经550℃硫化热处理20min可制备出黄铜矿结构的CuInS2薄膜,并具有(112)面的择优取向,所制备的CuInS2薄膜晶粒粒径约为1μm,光学带隙为1.51eV.%Copper indium alloy precursor was prepared by magnetron sputtering on glass substrate. The sulfurization of precursor films was carried out using elemental sulfur under N2 atmosphere at elevated temperatures. The effects of sulfurization temperatures on the microstructures, surface morphology and optical band gap of thin films were investigated. The microstructural and optical properties of CuInS2 absorber films were characterized by X-ray diffraction(XRD), field emission scanning electron microscopy(FE-SEM) and UV-visible(UV-Vis) spectrum. The results show that the CuInS2 thin films annealed at 550 C for 20min have chalcopyrite structure and presented (112) preferred orientation. The CuInS2 thin films with an average grain size of 1μm and band gap 1.5eV have been achieved.