Fe/GaN、Fe_3N/GaN的生长及其性能研究

摘要

应用金属有机物化学气相沉积（MOCVD）方法,在c轴取向的GaN上生长出Fe颗粒薄膜以及Fe3N薄膜。应用XRD、AFM、XPS以及SQUID等技术对薄膜的结构、表面形貌以及磁学性能等性质进行了分析,结果表明六方结构的GaN上生长的Fe为立方结构,且以Fe（110）//GaN（0002）晶面以及Fe[001]//GaN[11■0]轴的方式存在,而生长的Fe3N为六方结构,且以Fe3N（0002）//GaN（0002）晶面以及Fe3N[11■0]//GaN[1ī00]轴的方式存在。同时,磁学分析表明,平行于薄膜方向为易磁化方向,垂直于薄膜方向为难磁化方向。%Fe particle film and FeaN film were grown on GaN(0002) substrates by MOCVD method. Using XRI), AFM, XPS and SQUID equipments, we investigated the properties of structure, surface morphology and magnetism were also investigated. The results showed that, Fe particle film was formed in the configure of Fe (110)//GaN(0002) and Fe[001]//GaN[1120], while Fe3N film was formed in the configure of Fe3N(0002)// GaN(0002) and FeaN[1120]//GaN[1100]. It was also found that the magnetic moments of the film aligned normal to the c-axis more easily for both of Fe/GaN and Fe3N/GaN.