ZnO is a wide band-gap semiconductor, furthermore, it gained more favour due to its good physical and chemical properties, and it has been treated as one of the preferred candidates for photoelectric devices. In this paper, ZnO homo-buffer layer was grown on quartz substrates by radio frequency magnetron firstly, and the ZnO thin film was fabricated following. The homo-buffer layers temperatures were 373, 473, 573 and 673 K, respectively, and the growth temperature was controlled at 773 K. The XRD results indicates that the ZnO thin film is hexagonal structure with (002) preferential orientation. Compared with absorption and photoluminescence (PL) spectra, the best crystal growth of the film was achieved at the homo-buffer layer temperature about 673 K.%ZnO是一种宽禁带半导体,由于其优良的物理和化学性能得到越来越多的青睐,并成为了光电器件的首选材料.本文采用射频磁控溅射技术在石英衬底上溅射ZnO同质缓冲层,之后再生长ZnO薄膜.缓冲层温度分别为373、473、573和673 K,生长温度为773 K.X射线衍射结果表明ZnO薄膜为六方结构,并且是(002)择优取向.综合吸收光谱和和光致发光谱,缓冲层温度为673 K时制备的薄膜的结晶质量最好.
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