InSb焦平面器件表面末处理技术研究

摘要

InSb焦平面器件经过减薄后,表面有细微的划痕,且存在一定厚度的损伤层,影响芯片性能.通过对InSb焦平面器件表面末处理工艺方法的探索,确定了器件抛光后,去除表面损伤层和表面溅射ZnS抗反射膜的工艺实施方案,有效地改善了器件的表面质量,提高了焦平面器件的性能.%The performance of InSb focal plane device becomes lowed because of mild nicks and damnification after thinning.A method that the damnification layer removed and ZnS film sputtered after polishing is used through working over the treatment echnology for InSb focal plane-arrays chip surface, and the good performance of FPAS is gained.