MBE Growth of InSb and InTlSb for Long-Wavelength Infrared Photodetectors andFocal Plane Arrays

摘要

There has been sustained interest in the area of narrow bandgap compoundsemiconductors due to their potential in many applications such as infrared photodetectors. These devices are essential for use in far infrared thermal imaging systems, pollution monitoring systems and free space communications systems. In fact, InSb large area detector arrays can be monolithically integrated into a single device along with the necessary signal processing components. InSb also has a low effective mass and narrow bandgap which results in its high electron mobility. This characteristic is useful in high frequency devices and magnetoresistive sensors for position sensing in the automotive industry. Current InSb photodetector technology uses bulk InSb material with ion implanted p and n layers. InSb substrates, however, are not semi-insulating which complicates monolithic integration and increases electrical noise.