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InAs/InAsSb Type-II Superlattice Mid-Wavelength Infrared Focal Plane Array With Significantly Higher Operating Temperature Than InSb

机译：INAS / INASSB Type-II超晶格中波长红外焦平面阵列，工作温度明显高于INSB

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David Z. Ting; Sir B. Rafol; Sam A. Keo; Jean Nguyen; Arezou Khoshakhlagh; Alexander Soibel; Linda Hoglund; Anita M. Fisher; Edward M. Luong; Jason M. Mumolo; John K. Liu; Sarath D. Gunapala;
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1. InAs/InAsSb Type-II Superlattice Mid-Wavelength Infrared Focal Plane Array With Significantly Higher Operating Temperature Than InSb [J] . David Z. Ting, Sir B. Rafol, Sam A. Keo, Photonics Journal, IEEE . 2018,第6期

机译：InAs / InAsSb II型超晶格中波长红外焦平面阵列，其工作温度明显高于InSb
2. Mid-wavelength infrared high operating temperature pBn photodetectors based on type-II InAs/InAsSb superlattice [J] . Donghai Wu, Jiakai Li, Arash Dehzangi, AIP Advances . 2020,第2期

机译：基于II型INAS / INASSB超晶格的中波长红外高工作温度PBN光电探测器
3. Growth and fabrication of a mid-wavelength infrared focal plane array based on type-II InAs/GaSb superlattices [J] . Wang Guowei, Xiang Wei, Xu Yingqiang, Journal of Semiconductors . 2013,第11期

机译：基于II型InAs / GaSb超晶格的中波长红外焦平面阵列的生长与制备
4. Low-frequency noise in mid-wavelength infrared InAs/GaSb type-II superlattice based focal plane arrays [C] . M. Razeghi, A. Haddadi, G. Chen, SPIE Conference on Infrared Technology and Applications . 2014

机译：基于中波长红外INAS / GASB型号超晶格的焦平面阵列的低频噪声
5. Transport in Mid-Wavelength Infrared (MWIR) p- and n-Type InAsSb and InAs/InAsSb Type-II Strained Layer Superlattices (T2SLs) for Infrared Detection [D] . Casias, Lilian K. 2019

机译：在中波长红外线（MWIR）P-and N型INASSB和INAS / INASSB Type-II紧张层超大图格（T2SL）用于红外检测
6. InAs/InAsSb Strained-Layer Superlattice Mid-Wavelength Infrared Detector for High-Temperature Operation [O] . Gamini Ariyawansa, Joshua Duran, Charles Reyner, 2019

机译：用于高温操作的InAs / InAsSb应变层超晶格中波红外探测器
7. Mid-wavelength infrared high operating temperature pBn photodetectors based on type-II InAs/InAsSb superlattice [O] . Donghai Wu, Jiakai Li, Arash Dehzangi, 2020

机译：基于II型INAS / INASSB超晶格的中波长红外高工作温度PBN光电探测器
8. Significantly Improved Minority Carrier Lifetime Observed in a Long- Wavelength Infrared III-V Type-II Superlattice Comprised of InAs/InAsSb. [R] . B. C. Connelly E. H. Steenbergen G. D. Metcalfe H. Shen M. Wraback 2011

机译：在由Inas / Inassb组成的长波长红外III-V II型超晶格中观察到显着改善的少数载流子寿命。

InAs/InAsSb Type-II Superlattice Mid-Wavelength Infrared Focal Plane Array With Significantly Higher Operating Temperature Than InSb

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