首页> 外文期刊>IEEE Journal of Quantum Electronics >640$,times,$512 Pixels Long-Wavelength Infrared (LWIR) Quantum-Dot Infrared Photodetector (QDIP) Imaging Focal Plane Array
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640$,times,$512 Pixels Long-Wavelength Infrared (LWIR) Quantum-Dot Infrared Photodetector (QDIP) Imaging Focal Plane Array

机译:640 $,times,$ 512像素长波长红外(LWIR)量子点红外光电探测器(QDIP)成像焦平面阵列

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摘要

Epitaxially grown self-assembled InAs-InGaAs-GaAs quantum dots (QDs) are exploited for the development of large-format long-wavelength infrared focal plane arrays (FPAs). The dot-in-a-well (DWELL) structures were experimentally shown to absorb both 45deg and normal incident light, therefore, a reflection grating structure was used to enhance the quantum efficiency. The devices exhibit peak responsivity out to 8.1 mum, with peak detectivity reaching ~1times1010 Jones at 77 K. The devices were fabricated into the first long-wavelength 640times512 pixel QD infrared photodetector imaging FPA, which has produced excellent infrared imagery with noise equivalent temperature difference of 40 mK at 60-K operating temperature
机译:外延生长的自组装InAs-InGaAs-GaAs量子点(QD)被用于开发大幅面长波长红外焦平面阵列(FPA)。实验显示了孔中点(DWELL)结构既吸收45deg入射光又吸收法向入射光,因此,使用反射光栅结构来提高量子效率。该器件的峰值响应度高达8.1 mum,在77 K时的峰值探测灵敏度达到〜1×1010 Jones。该器件被制造为第一款长波长640×512像素QD红外光电探测器成像FPA,产生了出色的红外成像,具有等效的噪声温差在60-K的工作温度下为40 mK

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