射频磁控溅射氧化钒薄膜的结构与性能研究

摘要

Aimed at uncooled microbolometer infrared detector applications,vanadium oxide thin films were fabricated successfully by the radio frequency magnetron sputtering technique at low temperature of 300℃.The crystalline,microstructure and composition of the films were characterized by X-ray diffraction (XRD),atomic force microscopy (AFM),energy-dispersive spectra (EDS) and X-ray photoelectron spectroscopy (XPS).The electric properties of the film were investigated using four-point probe technique.The results show that the film is VO2 phase and exhibits amorphous structure with smooth surface morphology.Semiconductor-to-metal phase transition was not observed for such an amorphous VO2 thin film in the temperature range of 22-100℃.Moreover,excellent performances such as temperature coefficient of resistance (TCR) of -2.1％/℃ at room temperature and sheet resistance of 600 kΩ/square was obtained in the VO2 thin film with suitable thickness (100 nm),suggesting a potential application in uncooled microbolometer infrared detectors.%以非制冷微测辐射热计型红外探测器应用为需求背景,采用射频磁控溅射技术在300℃低温条件下制备了氧化钒薄膜.采用X射线衍射(XRD)、原子力显微镜(AFM)、能量色散谱(EDS)及X射线光电子能谱(XPS)技术表征了薄膜的结晶状态、微观结构与化学组成.采用四探针技术研究了薄膜的电学性能.结果表明该薄膜主要为非晶态的二氧化钒( VO2),并具有光滑的表面形貌.这种非晶VO2薄膜在22～100℃温度范围内不存在半导体-金属相变.100 nm厚的非晶VO2薄膜室温下的面电阻为600 kΩ/,同时表现出-2.1％/℃的较高电阻温度系数(TCR),这表明该薄膜有希望用于非制冷微测辐射热计型红外探测器.