分析了VDMOS器件击穿电压、导通电阻、阈值电压和开关特性等主要性能指标的影响因素，并借助半导体模拟仿真软件Sentaurus对VDMOS器件进行建模，调整器件各个结构参数，提出采用P体区间厚氧化层方法提高器件的动态特性，获得满足设计目标要求的器件电性能参数，最终形成器件设计版图，并依此在现有生产线上进行工艺流片，根据流片结果进一步优化调整设计参数，最终获得一款击穿电压400 V、导通电阻0.45Ω、阈值电压2.5 V、开关特性较好的功率VDMOS器件。%Influencing parameters of the main performance for VDMOS device, such as breakdown voltage, on-state resistance, threshold voltage and switching characteristics, were analyzed. By using semiconductor simulation software Sentaurus, the final layout was got by adjusting each structural parameters and increasing the thickness of oxide layer between P body regions, and the feasible parameters were obtained. The tape out at the existing production line was made and the design parameters were further optimized. Finally, a power VDMOS device with breakdown voltage of 400 V, on-state resistance of 0.45Ω, threshold voltage of 2.5 V, and good switching characteristics were obtained.
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