混合电压I/O接口的静电放电(electrostaticdischarge,ESD)保护设计是小线宽工艺中片上系统(SoC)设计的主要挑战之一。混合电压I/O接口的片上ESD保护既要避免栅氧可靠性问题,又要防止不期望的泄漏电流路径产生。这篇论文讨论了基于堆叠NMOS(Stacked—NMOS,STNMOS)的混合电压I/O接口的ESD保护设计构思和电路实现,通过不同ESD保护设计方案的比较,提出了一个最有效的保护方案。%Electrostatic discharge ( ESD ) protection design for mixed-voltage I/O interfaces has been one of the main challenges of system-on-a-chip ( SoC ) design in minor-line-width processes. The on-chip ESD protection circuit for mixed-voltage I/O interfaces should prevent the gate-oxide reliability issues and the undesired leakage current paths. The design concept and circuit implementations of the ESD protection designs for mixed-voltage I/O interfaces based on STNMOS is discussed in this paper. With comparisons among various ESD protection designs for mixed-voltage I/O circuits, an active ESD protection design of interface circuit is proposed.
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