B掺杂对Ti薄膜结构与性能的影响

摘要

采用双靶共溅射方法制备了微量B掺杂的Ti薄膜样品，利用x射线光电子能谱、扫描电子显微镜和x射线衍射仪对样品的掺杂原子浓度、表面形貌、晶型结构、晶粒尺寸和应力进行了分析表征．研究表明：掺杂后的Ti薄膜晶粒得到明显细化，并随着掺杂浓度的增大，薄膜的晶粒尺寸呈减小趋势，当掺杂浓度为5．50at％时，Ti薄膜晶粒尺寸减小为1．3nm，呈现出致密的柱状结构．B掺杂后的Ti薄膜应力由压应力转变为张应力．%B-doped Ti film is fabricated by direct current magnetron sputtering. The doping concentration, surlace morplaology, crystal structure, crystal grain diameter and stress are characterized by X-ray photoelectron spectroscopy, scanning electron microscopy and X-ray diffraction, respectively. It is found that, with the increase of B doping, the crystal grain diameter decreases monotonically and reaches a minimum of 1.3 nm at a B doping concentration of 5.50 at.%. The B-doped Ti film presents a compact columnar structure at that concentration. The stress of Ti film changes from compressive stress to tensile stress when B is doped.