二维半导体过渡金属硫化物的逻辑集成器件

摘要

微电子器件沿摩尔定律持续发展超过50年,正面临着高功耗等挑战.二维层状材料可以将载流子限制在界面1 nm的空间内,部分材料展现出高迁移率、能带可调、拓扑奇异性等特点,有望给“后摩尔时代”微电子器件带来新的技术变革.其中,以MoS2为代表的过渡金属硫化物具有1-2 eV的带隙、良好的空气稳定性和工艺兼容性,在逻辑集成方面有巨大潜力.本文综述了二维过渡金属硫化物在逻辑器件领域的研究进展,重点讨论电子输运机理、迁移率、接触电阻等关键问题及集成技术的现状,并为今后的发展指出了方向.%The semiconductor industry has experienced exponential growth for more than 50 years,following the Moore's Law.However,traditional microelectronic devices are currently facing challenges such as high energy consumption and the short-channel effect.As an alternative,two-dimensional layered materials show the ability to restrain the carriers in a 1 nm physical limit,and demonstrate high electron mobility,mutable bandgap,and topological singularity,which will hopefully give birth to revolutionary changes in electronics.The transition metal dichalcogenide (TMDC) is regarded as a prospective candidate,since it has a large bandgap (typically about 1-2 eV for a monolayer) and excellent manufacture compatibility.Here in this paper,we review the most recent progress of two-dimensional TMDC and achievements in logic integration,especially focusing on the following key aspects:charge transport,carrier mobility,contact resistance and integration.We also point out the emerging directions for further research and development.