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Erbium arsenide:indium aluminum gallium arsenide Schottky diodes for millimeter- and submillimeter-wave detectors

机译：砷化:：砷化铟铝镓镓肖特基二极管，用于毫米波和亚毫米波探测器

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作者
Young, Adam C.;
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作者单位

University of California Santa Barbara;

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授予单位 University of California Santa Barbara;
学科
学位 Ph.D.
年度 2008
页码 151 p.
总页数 151
原文格式 PDF
正文语种 eng
中图分类
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专利

1. Depth-controllable ultra shallow Indium Gallium Zinc Oxide/Gallium Arsenide hetero junction diode [J] . Seong-Uk Yang, Seung-Ha Choi, Jongtaek Lee Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2013,第Null期

机译：深度可控的超浅铟镓锌氧化物/砷化镓异质结二极管
2. Effect of Low-Energy Gallium-Aluminum-Arsenide and Aluminium Gallium Indium Phosphide Laser Irradiation on the Viability of C2C12 Myoblasts in a Muscle Injury Model [J] . Marcos Paulo Pinheiro Ferreira, Raquel Agnelli Mesquita Ferrari, Erick Diomedesse Gravalos, Photomedicine and Laser Surgery . 2009,第6期

机译：低能砷化镓铝铝和磷化铝镓铟激光对肌肉损伤模型中C2C12成肌细胞活力的影响
3. Effect of low-energy gallium-aluminum-arsenide and aluminium gallium indium phosphide laser irradiation on the viability of C2C12 myoblasts in a muscle injury model. [J] . Ferreira MP, Ferrari RA, Gravalos E Photomedicine and laser surgery . 2009,第6期

机译：低能砷化镓铝镓和磷化铝镓铟磷对肌肉损伤模型中C2C12成肌细胞活力的影响。
4. Indium gallium arsenide on silicon interband tunnel diodes for NDR-based memory and steep subthreshold slope transistor applications [C] . Pawlik D.J., Thomas P., Barth M., Device Research Conference: Conference Digest . 2009

机译：硅带间隧道二极管上的砷化铟镓，用于基于NDR的存储器和陡峭的亚阈值斜率晶体管应用
5. An indium gallium arsenide-gallium arsenide-aluminum gallium arsenide laterally-coupled distributed feedback ridge laser diode. [D] . Martin, Richard Dean. 1995

机译：一种砷化铟镓-砷化镓-砷化铝镓横向耦合的分布式反馈脊形激光二极管。
6. RF-to-DC Characteristics of Direct Irradiated On-Chip Gallium Arsenide Schottky Diode and Antenna for Application in Proximity Communication System [O] . Farahiyah Mustafa, Abdul Manaf Hashim 2014

机译：直接辐射的片上砷化镓肖特基二极管和天线的射频到直流特性用于近距离通信系统
7. Room-temperature carrier lifetimes and optical nonlinearities of gallium-indium-arsenide/aluminum-indium-arsenide and gallium-aluminum-indium-arsenide/aluminum-indium-arsenide MQW devices at 1.3μm [O] . Johns Steven 1964- 1991

机译：砷化镓铟/铝铟砷化物和砷化镓铝铟砷/铝铟砷化物MQW器件在1.3μm的室温载流子寿命和光学非线性

Erbium arsenide:indium aluminum gallium arsenide Schottky diodes for millimeter- and submillimeter-wave detectors

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