Chemical mechanical polishing (CMP) of sapphire.

摘要

The concept of chemical mechanical polishing (CMP) was examined for finishing sapphire. In this study sapphire was used as a model system for oxide ceramics. The removal rates were determined by weight loss. Surface quality and structure were characterized with surface probe microscopy (SPM).; Polishing experiments were designed to test the chemically modified surface layer. A series of abrasives with various hardnesses including mono-crystalline and polycrystalline diamond, alpha and gamma alumina, zirconia, ceria and silica were used. Diaspore was also evaluated. The results indicated that, with similar particle size and shape, harder abrasives do not necessarily cause faster material removal and better surface finish, and abrasives with hardness equal to or less than sapphire such as alpha alumina and gamma alumina achieved the best surface finish and efficient material removal. A hypothesis was proposed that the sapphire surface was modified by water to form a thin hydration laver with structure and hardness close to diaspore. Abrasives with a hardness between diaspore and sapphire polished the c-plane of sapphire with good surface finish and efficient removal. SPM indicated the hydration layer on the c-plane surface was about 1 nm thick.; Removal rate and surface finish as a function of pH were also examined on c-plane sapphire with nano-alumina abrasives. The removal rate as a function of pH was compared to the solubility behavior of alumina. The results showed the deviation of pH from the lowest solubility pH for alumina (pH = 5) was a driving force for the surface reaction to form a hydration layer.; The anisotropy of sapphire strongly affects removal rate and surface quality in CMP. The relationships among orientation. pH and abrasive were studied for sapphire with c (0001), a (11-20), and m (10-10) planes.; Based on the results, the CMP process for sapphire includes chemical reaction of the surface to form a thin reaction layer that is softer than sapphire. This reaction layer can be removed by an abrasive that is softer than sapphire but harder than the reaction layer. Good removal rate and surface finish with presumably low subsurface damage can be achieved by this process. The results show the potential for cost reduction and quality improvement in industrial finishing of sapphire and perhaps other hard materials.