N- compounds containing heterocyclic ring CMP in the presence of (chemical mechanical polishing) composition A method of manufacturing a semiconductor device including a chemical mechanical polishing of a III-V material (CMP)

摘要

(A) inorganic particles, organic particles, or their mixtures or composite materials, ( B) a polymer which contains at least one N- heterocycles, and (M) chemical mechanical polishing composition comprising an aqueous solvent (Q1) (however, Q1 is 1.5-4 in the presence of a) has a pH of .5, a method of manufacturing a semiconductor device including a chemical mechanical polishing of a substrate or a layer comprising at least one III-V material.BACKGROUND