PROCESS FOR MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR Si_1-x Ge_x MATERIAL IN PRESENCE OF CMP (CHEMICAL MECHANICAL POLISHING) COMPOSITION COMPRISING A SPECIFIC ORGANIC COMPOUND

摘要

FIELD: electricity.;SUBSTANCE: invention relates to a composition for chemical-mechanical polishing (CMP) and use thereof for polishing substrates for semiconductor industry. Method of making semiconductor devices includes chemical-mechanical polishing of elementary germanium and/or Si_1-xGe_x material, in which 0.1≤x1, in presence of a composition for chemical-mechanical polishing (CMP) including: (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of an oxidising agent, (C) at least one type of organic compound selected from a group consisting of alpha-amino acid or salt thereof, organic compound, including two to five carboxyl groups (-COOH), or salt thereof, mono-, di-, trialkanolamine or salt thereof, amino ether, including additional amino group, hydroxy group, alkoxy group, carboxyl moiety, or salt thereof, organic compound containing two to four hydroxy groups (-OH), or salt thereof, heterocyclic compound containing 5- or 6-member ring, containing from 1 to 3 nitrogen atoms as ring atoms-elements, or salt thereof, N,N,N′,N′-tetrakis(2-hydroxypropyl)ethylenediamine, 4-(2-hydroxyethyl)morpholine, pentamethyldiethylenetriamine, salt or adduct of triethanolamine (2,2′,2″-nitrilotris(ethanol)) and 4-[(2-ethylhexyl)amino]-4-oxoisocrotonic acid and 2,2′-dimorpholinodiethylether, and (D) an aqueous medium, wherein pH value of CMP composition ranges from 2.5 to 5.5.;EFFECT: proposed composition for CMP provides improved polishing characteristics.;12 cl, 1 tbl, 35 ex