首页> 外文学位 >Electromigration and thermomigration in lead-free tin-silver-copper and eutectic tin-lead flip chip solder joints.
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Electromigration and thermomigration in lead-free tin-silver-copper and eutectic tin-lead flip chip solder joints.

机译:无铅锡银铜和共晶锡铅倒装芯片焊点中的电迁移和热迁移。

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摘要

Phase separation and microstructure change of eutectic SnPb and SnAgCu flip chip solder joint were investigated under thermomigration, electromigration, stressmigration and the combination of these effects. Different morphological behaviors under DC and AC electromigration were seen. Phase separation with Pb rich phase migration to the anode was observed when current density is below 1.6 x 104 A/cm2 at 100°C. For some cases, phase separation of Pb-rich phase and Su-rich phase as well as refinement of lamellar microstructure has also been observed. We propose that the refinement is due to recrystallization. On the other hand, time-dependent melting of eutectic SnPb flip chip solder joints has been observed to occur frequently with current density above 1.6 x 104 A/cm 2at 100°C. It has been found that it is due to joule heating of the on-chip Al interconnects. We found that electromigration has especially generated voids at the anode of the Al. This damage has greatly increased the resistance of the Al, which produces the heat needed to melt the solder joint.;Owing to the line-to-bump configuration in flip chip solder joints, current crowding occurs when electrons enters into or exits from the solder bump. At the cathode contact, current crowding induced pancake-type void formation was observed widely. Furthermore, at the anode contact, we note that hillock or whisker forms. The cross-sectioned surface in SnPb showed dimple and bulge after electromigration, while that of SnAgCu remained flat. The difference is due to a larger back stress in the SnAgCu, consequently electromigration in SnAgCu is slower than that in SnPb.;For thermomigration in eutectic SnPb flip chip solder joints, phase separation of Sn and Pb occurred, with Pb moving to the cold end. Both Sn and Pb have a stepwise concentration profile across solder bump. Refinement of lamellar microstructure was observed, indicating recrystallization. Also, thermomigration in eutectic SnAgCu flip chip solder joint were presented. It seems that vacancy flux plays a dominant role in thermomigration in Pb-free solder bumps; voids formed on the cold end and Sn moved to the hot end.
机译:研究了在热迁移,电迁移,应力迁移以及这些效应共同作用下,共晶SnPb和SnAgCu倒装芯片焊点的相分离和微观结构变化。在直流和交流电迁移下观察到不同的形态学行为。当电流密度在100°C下低于1.6 x 104 A / cm2时,观察到具有富Pb相迁移到阳极的相分离。在某些情况下,还观察到了富Pb相和富Su相的相分离以及层状微结构的细化。我们建议细化是由于重结晶。另一方面,观察到随着时间的推移,在100°C时电流密度超过1.6 x 104 A / cm 2时,共晶SnPb倒装芯片焊点会随时间发生熔化。已经发现,这是由于片上Al互连的焦耳热引起的。我们发现电迁移尤其在铝的阳极产生了空隙。这种损坏极大地增加了Al的电阻,该Al产生了熔化焊点所需的热量。由于倒装芯片焊点中的线到凸点配置,当电子进入或离开焊锡时会发生电流拥挤颠簸。在阴极接触处,广泛观察到电流拥挤引起的薄煎饼型空隙的形成。此外,在阳极接触处,我们注意到形成小丘或晶须。 SnPb的横截面在电迁移后显示出酒窝和凸起,而SnAgCu的横截面保持平坦。差异是由于SnAgCu的背应力较大,因此SnAgCu中的电迁移比SnPb中的慢;对于共晶SnPb倒装芯片焊点中的热迁移,Sn和Pb发生了相分离,而Pb移至冷端。 Sn和Pb在焊料凸点上都具有逐步的浓度分布。观察到层状微结构的细化,表明重结晶。此外,提出了共晶SnAgCu倒装芯片焊点中的热迁移。看来空位助焊剂在无铅焊料凸点的热迁移中起着主导作用。冷端形成空洞,锡移动到热端。

著录项

  • 作者

    Ou Yang, Fan-Yi.;

  • 作者单位

    University of California, Los Angeles.;

  • 授予单位 University of California, Los Angeles.;
  • 学科 Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2007
  • 页码 163 p.
  • 总页数 163
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

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