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Effect of the combination of electromigration and thermomigration on phase migration and partial melting in flip chip composite SnPb solder joints

机译:电迁移和热迁移相结合对倒装芯片复合SnPb焊点相迁移和部分熔化的影响

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Department of Materials Science and Engineering, UCLA, Los Angeles, California 90095-1595 Composite SnPb flip chip solder joints are used to study the combined effect of electromigration and thermomgration. The study showed that electromigration have led to the redistribution of Sn-rich phase and Pb-rich phase and displaced the low melting Sn-rich phase to the downward electron current crowding region in the contact area on the chip side. A pancake-type void forms and propagates at the contact interface and is accompanied by the migration of the Sn-rich phase followed by the partial melting of the solder joint. The migration of the Sn-rich phase was unexpected, and the location of the melting was unpredicted. We propose here that the migration of Sn-rich phase in the contact area is caused by thermomigration in the lateral direction owing to the existence of a localized hot spot at the current crowding region. The melting behavior is time dependent because it requires an incubation time for void formation, void propagation, and phase migration. Finally, the partial melting at the Sn-rich region occurs due to a large Joule heating at the end of the void growth before an electrical opening takes place.
机译:加州大学洛杉矶分校材料科学与工程系,加利福尼亚,加利福尼亚州90095-1595复合SnPb倒装芯片焊点用于研究电迁移和热迁移的综合作用。研究表明,电迁移导致富Sn相和富Pb相的重新分布,并使低熔点富Sn相移到芯片侧接触区域中的向下电子流拥挤区域。薄饼型空隙在接触界面处形成并传播,并伴随着富锡相的迁移,接着是焊点的部分熔化。富锡相的迁移是出乎意料的,并且熔化的位置是无法预测的。我们在这里提出,由于当前拥挤区域中存在局部热点,在横向上的热迁移导致富锡相在接触区域的迁移。熔化行为与时间有关,因为它需要一定的保温时间才能形成空隙,空隙扩散和相迁移。最后,由于在电开口发生之前在空隙生长结束时的较大的焦耳热,在富锡区域发生了部分熔化。

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