Nitrogen doping in low temperature halo-carbon homoepitaxial growth of 4H-silicon carbide.

摘要

With the low-temperature halo-carbon epitaxial growth technique developed at MSU prior to this work, use of a halo-carbon growth precursor enabled low-temperature homoepitaxial process for 4H-SiC at temperatures below 1300 °C with good quality.;Investigations of the nitrogen doping dependence are reported. It has been demonstrated that the efficiency of the nitrogen incorporation may be different for different substrate orientations, with the C-face showing the higher value of doping.;The Si/C ratio is known to influence the doping during the epitaxial growth due to the site-competition mechanism. The doping on the C-face showed weak dependence on the Si/C ratio. On the Si-face, the doping dependence follows the site-competition trend. At high Si/C ratio, the doping trend on Si-face shows strong deviation.;Both of the investigated trends are suggested for use as the main process dependencies for achieving a wide range of n-type doping of SiC during the low-temperature halo-carbon homoepitaxial process.