Analysis of Junction Recombination of P-type Single Crystalline Silicon Solar Modules Affected by Potential Induced Degradation under non-STC

摘要

Irradiance-dependent current-voltage (I-V) measurements have been used to study the junction recombination mechanisms in solar modules affected by potential induced degradation (PID). In this study, the double-diode-model was used to describe the PID-affected module's performance at low illuminations. The experimental results showed that PID strongly influenced the depletion region recombination behavior (J