The estimation and revisionof barrier heights in 4H-SiC and 6H-SiC schottky diodes

摘要

The barrier heights of various Schottky diodes in n-type 4H-SiC and 6H-SiC is estimated from published data at Si-face and C-face, respectively, employing the LSM (least square method). It is found that the barrier hieght in SiC Schottky diode is a linear function of metal work function as #phi#_B=a#phi#_m+b. The a is about 0.63 approx 0.72. The already established analytic expression in [9] is compared with the estimated linear expression and revised by employing the empirical factor, #alpha# between the upper and lower boundary of interface state density, D_(rr). The values of a lie in 1.65 approx 32.1.