In situ characterization on AlN films grown on silicon by MOCVD

摘要

Films of AlN were grown on Si under vacuum pressure at 900 deg and examined ex situ with infrared reflectance spectroscopy and microscopy, scanning electron microscopy, x-ray diffraction and rutherford backscattering spectroscopy. Collection of IR emission spectra for in situ characterization was successful and used to identify growth parameters during film growth.