VAPOR PHASE EPITAXY METHOD OF ALN-BASED GROUP III NITRIDE THICK FILM, AND MOCVD APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a method for growing an AlN-based group III nitride crystal having improved crystal quality by applying the epitaxial growth, and to provide an apparatus for achieving the method.;SOLUTION: An opposing section 31a that is one portion of a reaction tube 31 and nearly opposes a placement section where a substrate is placed in vapor phase epitaxy, namely a part to which group III nitride may adhere, is formed by a non-oxide material, preferably SUS. A cooling pipe 41 for cooling SUS is provided. An MOCVD apparatus 100 having a coating film 32 for preventing re-scattering by a material containing Ga is used for a prescribed region including the surface of the opposing section 31a. When the opposing section 31a is cooled and the substrate 1 is heated to 1,100-1,250°C by a heater 30 in crystal growth, the temperature of a region coated with the coating film 32 reaches 500-900°C, but the group III nitride generated by a thermal decomposition reaction adheres in a film shape when it comes flying to the region. Once the group III nitride adheres to the region, it cannot be peeled off easily and is not scattered again easily, thus preventing an epitaxial film from being contaminated.;COPYRIGHT: (C)2007,JPO&INPIT