Nitrided Gate Oxide Formed by Rapid Thermal Processing for 4H-SiC MOSFETs

摘要

Rapid Thermal Processing has been evaluated as an alternative to the conventional furnace process for gate oxide formation of SiC MOSFETs. We show that the growth of the SiO_2 films in a RTP chamber is orders of magnitude faster than in a conventional furnace. As well as being fast, this innovative oxidation method produces a significant improvement of MOSFET performances. Indeed, we demonstrate that combining the beneficial effect of in-situ surface preparation by H_2 anneal with the one of N_2O oxidation, the channel mobility increases and the electrical stability with respect to constant bias stress at low-field is improved.