Department of Physics, Auburn University, Auburn, Alabama 36849;
Materials Research and Education Center, Department of Mechanical Engineering, Auburn University, Auburn, Alabama 36849;
Department of Physics, Auburn University, Auburn, Alabama 36849;
Department of Physics, Auburn University, Auburn, Alabama 36849;
Materials Research and Education Center, Department of Mechanical Engineering, Auburn University, Auburn, Alabama 36849;
Materials Research and Education Center, Department of Mechanical Engineering, Auburn University, Auburn, Alabama 36849;
Materials Research and Education Center, Department of Mechanical Engineering, Auburn University, Auburn, Alabama 36849;
Department of Physics, Auburn University, Auburn, Alabama 36849;
Department of Physics, Auburn University, Auburn, Alabama 36849;
Department of Physics, Auburn University, Auburn, Alabama 36849;
机译:基于Algan / GaN HEMT的生物传感器发展的观点
机译:使用AlGaN / GaN / AlGaN双异质结构抑制增强模式基于GaN的HEMT中的电流崩塌
机译:基于AlGaN / GaN / SiC HEMT层结构的AlGaN / GaN双色光电探测器
机译:栅极长度与源排水比率的影响 - 基于AlGaN / GaN Hemt的化学传感器和生物传感器的敏感性
机译:使用基于AlGaN / GaN的HEMT器件的人MIG分析和实验生物传感器。
机译:使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
机译:栅极漏电流对alGaN / GaN HEmT的影响由低频噪声和脉冲电测量证明,栅极漏电流对alGaN / GaN HEmT的影响由脉冲I-V和低频噪声测量证明