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Experimental verification of row-by-row variable V/sub DD/ scheme reducing 95 active leakage power of SRAM''s

机译:逐行可变V / sub DD /方案的实验验证,可降低SRAM 95%的有源泄漏功率

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Low-power SRAM has become a critical component in recent VLSI systems. This paper reports an SRAM reducing 95% of active leakage power. The SRAM is successfully implemented and reliably measured for the first time, with self-aligned timing generation to
机译:低功耗SRAM已成为最近VLSI系统中的关键组件。本文报告了一种可降低95%有源泄漏功率的SRAM。首次成功实现并可靠地测量了SRAM,并具有自对准时序生成功能

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