Abstract: A conventional pn diffused junction silicon photodiode originally developed for visible and near infrared light was optimized for ultraviolet wavelength spectrum. Optimization was performed with numerical simulation tools and experimental work. The results of modeling and experiment are compared and discussed. MOS capacitor was integrated on active region of photodiode in order to control the quality of fabricated surface passivation layer. p$+$PLU$ junction structure and antireflective coating have been identified as two most important design and processing steps.!12
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机译：摘要：最初为可见光和近红外光开发的常规pn扩散结硅光电二极管已针对紫外波长光谱进行了优化。使用数值模拟工具和实验工作进行了优化。比较和讨论了建模和实验的结果。为了控制所制造的表面钝化层的质量，将MOS电容器集成在光电二极管的有源区域上。 p $ + $ PLU $ / n的结结构和抗反射涂层已被确定为两个最重要的设计和处理步骤。12
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