Silicon photodiode for monolithically integrated circuits and manufacturing processes

摘要

An integrated photodiode (22) is formed by providing a silicon substrate with a deep recessed tub in excess of about 20 micrometres deep, forming an isolated p-n junction (15,16) on the peripheral tub surfaces, and selectively epitaxially filling the tub with intrinsic silicon (17). A desired monolithic integrated circuit (20,21) is fabricated outside the tub periphery using conventional VLSI techniques. A photodiode electrode structure (25,26) within the tub periphery can be fabricated at the same time as other monolithic circuit components are formed.