Application of Ion Implantation in the Manufacturing of Monolithic Bipolar Analogue Integrated Circuits

摘要

The application of ion implantation for bipolar analogue integrated circuits has been investigated under different aspects of bipolar technology. The main items were: high frequency transistors; bases; resistors (especially those with a high resistance); passivation methods; and components. The existing doping methods were replaced by more controllable ion implantation and processes are developed which can only be realized by means of ion implantation. In both cases, processes were developed with technological as well as economical advantages with respect to standard technologies. The results are partly introduced into large-scale production.