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Optical switching due to band-gap renormalization in MQW GaAs/AlxGa1-xAs at high excitation levels

机译：在高激发水平下由于MQW GaAs / AlxGa1-xAs中的带隙重新归一化而导致的光开关

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Abstract: The e-h plasma stimulated luminescence line A$-1$/ red-shifted (25 meV) due to band-gap renormalization is detected. The A$-1$/ emission lasts 100 ps. This peculiarity evidenced that a switching time of 100 ps can be achieved. !0

机译：摘要：检测到由于带隙重归一化引起的e-h等离子体激发的发光线A $ -1 $ /红移（25 meV）。 A $ -1 $ /发射持续100 ps。这种特性证明可以实现100 ps的切换时间。！0

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来源
《Topical Meeting on Photonic Switching》|1992年|p.74-78|共5页
会议地点 Minsk(BY);Minsk(BY)
作者
A.I. Bobrysheva; Institute of Applied Physics; Chisinau; Moldova; I.I. Dobinda; Institute of Applied Physics; Kishinev; Moldova; S.A. Moskalenko; Institute of Applied Physics; Chisinau; Moldova; V.I. Pavlenko; Institute of Applied Physics; Kichinev; Moldo;
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正文语种 eng
中图分类无线电电子学、电信技术;
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1. Ultrafast all-optical polarization switching based on "virtual excitation" of InGaAs(P) MQWs [J] . Zheng Chen, Tao Wang Optics Communications: A Journal Devoted to the Rapid Publication of Short Contributions in the Field of Optics and Interaction of Light with Matter . 2007,第1期

机译：基于InGaAs（P）MQW的“虚拟激发”的超快全光偏振切换
2. An InGaAs/GaAs MQW optical switch based on field-induced waveguides [J] . Stohr A., Humbach O. IEEE Photonics Technology Letters . 1994,第7期

机译：基于场致波导的InGaAs / GaAs MQW光开关
3. Picosecond all-optical polarization switching in InGaAsP MQW's at 1.52 /spl mu/m [J] . Hyland J.T., Kennedy G.T. IEEE Photonics Technology Letters . 1998,第10期

机译：InGaAsP MQW中以1.52 / spl mu / m的皮秒全光偏振切换
4. Optical switching due to band-gap renormalization in MQW GaAs/AlxGa1-xAs at high excitation levels [C] . A.I. Bobrysheva, I.I. Dobinda, S.A. Moskalenko, Topical meeting on photonic switching . 1993

机译：在高励磁水平下MQW GaAs / Alxga1-XA中的带间隙重整导致光学切换
5. Resonant atomic switching near a photonic band-gap: Towards an all-optical micro-transistor. [D] . Florescu, Marian Luli. 2003

机译：在光子带隙附近的共振原子切换：朝向全光微型晶体管。
6. Optical identification of electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure [O] . Xiaolong Zhou, Yonghai Chen, Bo Xu 2011

机译：非对称InAs / InGaAs / GaAs孔内结构电子态能级的光学识别
7. Suppression of Switching Noise in a Quantum Device Based on GaAs/AlxGa1-xAs Two Dimensional Electron Gas System [O] . Y. Oh, M. Seo, Y. Chung 2012

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8. Role of Deep Level Traps in the Optically Controlled Semi-Insulating GaAs Switch. [R] . Burke, T., Weiner, M., Bovino, L., 1987

机译：深层陷阱在光控半绝缘Gaas开关中的作用。

Optical switching due to band-gap renormalization in MQW GaAs/AlxGa1-xAs at high excitation levels

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