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Suppression of Switching Noise in a Quantum Device Based on GaAs/AlxGa1-xAs Two Dimensional Electron Gas System

机译：基于GaAs / Alxga1-XA二维电子气体系统的量子装置中的开关噪声抑制

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Y. Oh; M. Seo; Y. Chung;
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1. Detecting the Sign Reversal of the g-Factor of Two-Dimensional Electrons in Narrow GaAs/AlxGa1-xAs Quantum Wells [J] . Solovev V. V., Dietsche W., Kukushkin I. V. JETP Letters . 2014,第11期

机译：检测窄GaAs / Alxga1-XAS量子阱中二维电子的符号逆转。
2. INFRARED ABSORPTION DUE TO TWO-DIMENSIONAL-ELECTRON-GAS COLLECTIVE EXCITATION IN GAAS/ALXGA1-XAS MULTIPLE-QUANTUM-WELL STRUCTURES [J] . Zhu QS., Du QG., Zhong ZT., Physical Review, B. Condensed Matter . 1995,第3期

机译：GAAS / ALXGA1-XAS多量子阱结构中二维电子-气体集体激发引起的红外吸收
3. TRANSMITTED-ACOUSTIC-PHONON DRAG BETWEEN TWO-DIMENSIONAL ELECTRON GASES IN GAAS/ALXGA1-XAS SYSTEMS AT LOW TEMPERATURES - MONTE CARLO STUDY [J] . Mosko M., Pardo F., Pelouard JL. Physical Review, B. Condensed Matter . 1995,第8期

机译：在低温下GaAs / Alxga1-XAS系统中的二维电子气体之间的传输 - 声学 - 声子 - 蒙特卡罗研究
4. Optical Imaging of Quantum Hall Current in GaAs/AlGaAs Two-dimensional Electron System [C] . K. Oto, S. Kaneko, R. Inaba, International Conference on the Physics of Semiconductors . 2009

机译：GaAs / Algaas二维电子系统中量子霍尔电流的光学成像
5. Optoelectronic devices based on low threshold strained InGaAs/GaAs quantum well lasers grown on structured substrates [D] . Frateschi, Newton Cesario 1993

机译：基于在结构化衬底上生长的低阈值应变InGaAs / GaAs量子阱激光器的光电器件
6. Investigation of Noise and Contrast Sensitivity of an Electron Multiplying Charge-Coupled Device (EMCCD) based Cone Beam Micro-CT System [O] . Sumukh Bysani Krishnakumar, Alexander R. Podgorsak, SV Setlur Nagesh, -1

机译：基于电子倍增电荷耦合器件（EMCCD）的锥形束微CT系统的噪声和对比度灵敏度的研究
7. Optically induced density depletion of the two-dimensional electron system in GaAs/AlxGa1-xAs heterojunctions [O] . Hayne Manus, USHER A, PLAUT A S, 1994

机译：GaAs / AlxGa1-xAs异质结中二维电子系统的光致密度耗尽
8. Properties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits [R] . Nakamura, T. , Abe, Y. , Kasai, S. , 2006

机译：用于六角形BDD量子电路的单量子点Gaas单电子路径开关节点器件的特性

Suppression of Switching Noise in a Quantum Device Based on GaAs/AlxGa1-xAs Two Dimensional Electron Gas System

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