IMPACT OF BODY-TO-BODY LEAKAGE ON MOSFET DESIGN SCALING IN PARTIALLY DEPLETED SOI

摘要

The impact of body-to-body leakage in partially depleted SOI devices is examined. This paper describes, for the first time, the BBL impact on circuit performance based on models derived from measured BBL current-voltage characteristics (I-Vs). It also explores key sensitivities to process variations in diffusion depth, silicon film thickness, and stacked MOSFET gate spacing. The impact of BBL is found to depend on circuit topology. To gain the full advantage of SOI performance, BBL has been eliminated by making source and drain diffusions deep enough to abut the BOX. The reduction in diffusion depth between minimally spaced stacked FETs represents the worst-case condition for BBL.