A 5V-ONLY 16M FLASH MEMORY USING A CONTACTLESS ARRAY OF SOURCE-SIDE INJECTION CELLS

摘要

This source side injection virtual ground FLASH device is competitive with the standard NOR based FLASH devices in the high density marketplace in regards to die size, cost, reliability and speed. Eliminating the erase disturb condition and significantly limiting the program disturb issues makes this new architecture more reliable and attractive for the next generation of fast program high density FLASH memory.This technology is further enhanced because:1. It is easy to scale to smaller geometries.2. It is capable of 3.3V-only operation.3. Smaller sector sizes without a die size penalty are available.4. The array area is ideally dependent upon the minimum geometry rather than a particular parameter of the cell.5. Interface circuitry can be designed efficiently with standard twin-well CMOS processes.