Passivation of (111) Si/SiO_2 interfacial defects by molecular hydrogen

摘要

The reaction of molecular hydrogen with P_b defects at the (111) Si/SiO_2 interface has been studied using a remote radio frequency (RF) probe to continuously monitor the rate of removal of electricaly active defects. The kinetic parameters calculated from these experiments are compared with the earlier work of Brower and Stesmans. Although the data confirms the nonexponential nature of the reaction reported by Stesmans the activation energy of the process is found to be somewhat different.