首页> 外文会议>Symposium on Thin-Films - Stresses and Mechanical properties Vii, held December 1-5, 1997, Boston, Massachusetts, U.S.A. >Structure determination of B_4C and SiC thin films Via synchrotron high-resolution diffraction
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Structure determination of B_4C and SiC thin films Via synchrotron high-resolution diffraction

机译:同步加速器高分辨率衍射确定B_4C和SiC薄膜的结构

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Thin films of B_4C and SiC deposited by magnetron sputtering as components of multilayers have the potential to provide significant property improvements over current wear resistant coating technology. B_4C and SiC have previously been found to be amorphous and possibly nanocrystalline under the deposition conditions used. This study reports results of synchrotron x-ray scattering experiments providing information on the degree of crystallinity, strain, average density, and coordination number in 2000 A films of these compounds on Si substrates. Radial distribution functions from B_4C and SiC thin films were obtained and used to model the structure. Strain results are compared with Double Crystal x-ray Diffraction Topography (DCDT) results as a means for establishing a standard strain state.
机译:通过磁控溅射沉积的B_4C和SiC薄膜作为多层结构的组件,具有比目前的耐磨涂层技术显着改善性能的潜力。先前已经发现,在所使用的沉积条件下,B_4C和SiC是非晶态的并且可能是纳米晶的。这项研究报告了同步加速器X射线散射实验的结果,该实验提供了有关Si衬底上这些化合物的2000 A膜的结晶度,应变,平均密度和配位数的信息。从B_4C和SiC薄膜获得了径向分布函数,并将其用于对结构进行建模。将应变结果与双晶X射线衍射形貌(DCDT)结果进行比较,以建立标准应变状态。

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