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Structure determination of B_4C and SiC thin films Via synchrotron high-resolution diffraction

机译:通过同步分辨率衍射的B_4C和SiC薄膜的结构测定

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Thin films of B_4C and SiC deposited by magnetron sputtering as components of multilayers have the potential to provide significant property improvements over current wear resistant coating technology. B_4C and SiC have previously been found to be amorphous and possibly nanocrystalline under the deposition conditions used. This study reports results of synchrotron x-ray scattering experiments providing information on the degree of crystallinity, strain, average density, and coordination number in 2000 A films of these compounds on Si substrates. Radial distribution functions from B_4C and SiC thin films were obtained and used to model the structure. Strain results are compared with Double Crystal x-ray Diffraction Topography (DCDT) results as a means for establishing a standard strain state.
机译:通过磁控溅射沉积的B_4C和SiC的薄膜作为多层组分具有潜力,可以提供电流耐磨涂层技术的显着性能。在使用的沉积条件下,先前已发现B_4C和SiC是无定形的,并且可能是纳米晶体。本研究报告了同步X射线散射实验的结果,提供了关于在Si衬底上这些化合物的结晶度,菌株,平均密度和配位数的信息的信息。获得B_4C和SIC薄膜的径向分布函数并用于模拟结构。将应变结果与双晶X射线衍射形貌(DCDT)进行比较,结果作为建立标准应变状态的装置。

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