Physical model and numerical results of dissociation kinetics of hydrogen-passivated Si/SiO_2 interface defects

摘要

A simple model of thermal dissociation and recovery of hydrogen-passivated silicon defects at the Si/SiO_2 interface, such as P_b - centers, during vacuum thermal annealing has been suggested. This model considers reactions of hydrogen with defect states at the Si/SiO_2 interface and diffusion of liberated atomic and molecular hydrogen in a silicon dioxide film. An excellent agreement was obtained between the experimental and numerical simulation results for oxides with different thickness (200-1024 A), grown both (111) and (100) samples and annealed in the temperature range (480-700deg C).