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机译:分层电容器模型对缺陷对Si / SiO_2界面局部光学介电性能的影响
School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, People's Republic of China;
School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, People's Republic of China;
School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, People's Republic of China;
School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, People's Republic of China;
School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, People's Republic of China;
School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, People's Republic of China;
School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, People's Republic of China;
机译:沉积介电膜密度对多层电容器界面偶极层强度温度依赖性的影响
机译:应变对凝结生长具有纳米厚度Ge_xSi_(1-x)层的SiO_2 / Ge_xSi_(1-x)/ SiO_2 /(100)Si结构的Ge悬空键界面缺陷的钝化效率的影响
机译:PECVD SiOxNy介电层结构性能与Si / SiOxNy / Al电容器界面电性能的相关性
机译:原位PVD法制备TiO_2 / HfSiO / SiO_2层状结构的介电和界面性能
机译:固态解决方案趋势会影响介电电容器中亚微米层的电气设计。
机译:单层MoS2和HfO2高介电常数MOS电容器中界面状态的影响和起源
机译:探测介电电容器应用设计缺陷多层聚合物纳米复合材料的界面激活