Ferroelectric properties and crystalline structures of BaMgF_4 thin films grown on Pt(111)/SiO_2/Si(100)

机译：在Pt（111）/ SiO_2 / Si（100）上生长的BaMgF_4薄膜的铁电性能和晶体结构

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Crystalline quality and ferroelectric properties of (120)-oriented BaMgF_4 (BMF) films grown on Pt (111)/SiO_2/Si(100) and n-Si(111) substrates have been investigated. The BVaMgF_4 films grown on Pt (111) have large and flat grains, while the films on Si(111) have small grains. The C-V curve of BaMgF-4/Pt(111)/SiO_2/Si(100) diodes showed a hysteresis loop with a memory window of 3.8V.

机译：研究了在Pt（111）/ SiO_2 / Si（100）和n-Si（111）衬底上生长的（120）取向BaMgF_4（BMF）薄膜的晶体质量和铁电性能。在Pt（111）上生长的BVaMgF_4膜具有大而平坦的晶粒，而在Si（111）上的膜具有小晶粒。 BaMgF-4 / Pt（111）/ SiO_2 / Si（100）二极管的C-V曲线显示了一个滞后回线，存储窗口为3.8V。

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《Symposium on Polycrystalline Thin Films - Structure, Texture, Properties and Applications III March 31-April 4,1997, San Francisco, California, U.S.A》|1997年|p.75-80|共6页
会议地点 San Francisco CA(US)
作者
Masashi Moriwaki; Koji Aizawa; Eisuke Tokumitsu; Hiroshi Ishiwara;
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正文语种 eng
中图分类物理学;
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Ferroelectric properties and crystalline structures of BaMgF_4 thin films grown on Pt(111)/SiO_2/Si(100)

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