Preparation And Ferroelectric Properties Of Predominantly (100)-oriented Srbi_4ti_4o_(15) Ferroelectric Thin Film On Pt(111)tio_2/sio_2/si(100) Substrate

摘要

A predominantly (100)-oriented SrBi_4Ti_4O_(15) (SBTi) ferroelectric thin film (orientation factor f_((100)) = 68%) was formed on Pt(111)/TiO_2/SiO_2/Si(100) substrate using a metal organic decomposition process combined with a sequential layer annealing method. The film exhibits a well saturated hysteresis loop with a rem-anent polarization of 25 μC/cm~2. Furthermore, the coercive field (E_c) is as low as 80 kV/cm. The values of the dielectric constant (ε_r) and dissipation factor (tan δ) at 100 kHz are estimated to be 380 and 0.08, respectively. 15% loss of P_r was observed after 10~9 switching cycles in the predominantly (100)-oriented SBTi film. The growth mode of the predominantly (100)-oriented SBTi film is discussed based on the sequential layer annealing process and the anisotropic structure of SBTi.