首页> 外文期刊>Materials Letters >Nanoscale investigation of ferroelectric and piezoelectric properties in (Pb,Ca)TiO3 thin films grown on LaNiO3/LaAlO3(100) and Pt/Si(111) using piezoresponse force microscopy
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Nanoscale investigation of ferroelectric and piezoelectric properties in (Pb,Ca)TiO3 thin films grown on LaNiO3/LaAlO3(100) and Pt/Si(111) using piezoresponse force microscopy

机译:使用压电响应力显微镜对在LaNiO3 / LaAlO3(100)和Pt / Si(111)上生长的(Pb,Ca)TiO3薄膜中的铁电和压电性质进行纳米级研究

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摘要

Single phase polycrystalline and strong textured Pb0.76Ca0.24TiO3 (PCT24) thin films have been grown on platinum coated silicon and LaAlO3(100) (LAO) substrates using LaNiO3 (LNO) as a buffer layer by chemical solution deposition. X-ray diffraction measurements showed that the PCT24 thin films crystallize in a highly a-oriented single phase on LNO/LAO(100). The effects of the LNO buffer layer, nature of the substrate, and film orientation on the ferroelectric and piezoelectric properties were investigated in the nanoscale range using piezoresponse force microscopy (PFM). Local piezoelectric hysteresis loops for PCT24/LNO/LAO(100) oriented films and PCT24/Pt/Si polycrystalline films were measured on selected grains. From these piezoloops, PCT24/LNO/LAO(100) oriented films show a higher response (maximum relative d33 value) than PCT24/Pt/Si polycrystalline films. Furthermore, the comparison of simultaneously acquired surface morphology and piezoresponse images of the PCT24/Pt/Si films revealed the presence of inactive grain regions. In contrast, highly a-oriented films showed a higher presence of active grains. Our observations suggest that the improvement of ferro/piezoelectric properties is greatly associated with the use of LNO buffer layers and the growth of highly a-oriented films. (C) 2017 Elsevier B. V. All rights reserved.
机译:通过化学溶液沉积,使用LaNiO3(LNO)作为缓冲层,在铂涂覆的硅和LaAlO3(100)(LAO)衬底上生长了单相多晶且具有强纹理的Pb0.76Ca0.24TiO3(PCT24)薄膜。 X射线衍射测量表明PCT24薄膜在LNO / LAO(100)上以高度a取向的单相结晶。使用压电响应力显微镜(PFM)在纳米范围内研究了LNO缓冲层,衬底的性质以及膜取向对铁电和压电性能的影响。在选定的晶粒上测量了PCT24 / LNO / LAO(100)取向薄膜和PCT24 / Pt / Si多晶薄膜的局部压电磁滞回线。从这些压电环中,PCT24 / LNO / LAO(100)取向的薄膜显示出比PCT24 / Pt / Si多晶薄膜更高的响应(最大相对d33值)。此外,对同时获取的PCT24 / Pt / Si薄膜的表面形态和压电响应图像的比较显示,存在非活性晶粒区域。相反,高度a取向的薄膜显示出更高的活性晶粒。我们的观察结果表明,铁/压电性能的提高与LNO缓冲层的使用和高度a取向膜的生长密切相关。 (C)2017 Elsevier B.V.保留所有权利。

著录项

  • 来源
    《Materials Letters》 |2017年第1期|64-68|共5页
  • 作者单位

    Univ Estadual Paulista Unesp, Dept Chem, POB 473, BR-17033360 Bauru, SP, Brazil;

    Univ Estadual Paulista Unesp, Dept Chem, POB 473, BR-17033360 Bauru, SP, Brazil;

    Univ Fed Sao Carlos, Dept Chem, LIEC, Via Washington Luiz,Km 235,POB 676, BR-13565905 Sao Carlos, SP, Brazil;

    Univ Fed Sao Carlos, Dept Phys, NanO LaB, Via Washington Luiz,Km 235,POB 676, BR-13565905 Sao Carlos, SP, Brazil;

    Univ Estadual Paulista Unesp, Inst Chem, Araraquara, SP, Brazil;

    Univ Sao Paulo, Inst Phys Sao Carlos, BR-13560250 Sao Carlos, SP, Brazil|UNICEP, BR-13563470 Sao Carlos, SP, Brazil;

    Univ Fed Sao Carlos, Dept Chem, LIEC, Via Washington Luiz,Km 235,POB 676, BR-13565905 Sao Carlos, SP, Brazil|Univ Estadual Paulista Unesp, Inst Chem, Araraquara, SP, Brazil;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Thin films; PFM; Buffer layer; Epitaxial growth;

    机译:薄膜;PFM;缓冲层;外延生长;

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