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Ferroelectric and piezoelectric properties of lanthanoid-substituted Bi_4Ti_3O_(12) thin films grown on (111)Pt and (100)IrO_2 electrodes

机译:(111)Pt和(100)IrO_2电极上生长的镧系元素取代的Bi_4Ti_3O_(12)薄膜的铁电和压电特性

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摘要

We investigated the effect of film orientation on piezoelectric and ferroelectric properties of (Bi_(3.25)Ln_(0.75))Ti3O_(12) (Ln=La, Nd, and Sm). c-axis-oriented films were grown on (111)Pt electrodes with nondoped Bi_4Ti_3O_(12) buffer layers. The films grown on ((100)IrO_2 electrodes showed predominantly (111) and (110) orientation. The piezoelectric coefficient d_(33,f) and the remanent polarization P_r were larger for (111)- and (110)-oriented films than for c-axis-oriented films. This relation was independent of the type of lanthanide species used as Bi substituting ion. This strongly indicates that the direction of the spontaneous polarization vector does not turn toward the c axis due to such substitutions, as was recently proposed in the literature.
机译:我们研究了膜取向对(Bi_(3.25)Ln_(0.75))Ti3O_(12)(Ln = La,Nd和Sm)的压电和铁电性能的影响。在具有非掺杂Bi_4Ti_3O_(12)缓冲层的(111)Pt电极上生长c轴取向的膜。 (100)IrO_2电极上生长的薄膜主要表现为(111)和(110)取向,(111)和(110)取向的薄膜的压电系数d_(33,f)和剩余极化P_r较大。对于c轴取向的薄膜而言,这种关系与用作Bi取代离子的镧系元素的种类无关,这强烈表明自发极化矢量的方向由于这种取代而没有朝向c轴,最近在文献中提出。

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  • 来源
    《Applied Physics Letters》 |2005年第17期|p.172904.1-172904.3|共3页
  • 作者单位

    Ceramics Laboratory, Ecole Polytechnique Federate de Lausanne (EPFL), CH-1015 Lausanne, Switzerland;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 应用物理学;
  • 关键词

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