首页> 外文会议>Symposium for Passive Components; 20050321-24; Palm Springs,CA(US) >Medialess High Efficiency Electroplating of SMT Discrete Device Terminations
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Medialess High Efficiency Electroplating of SMT Discrete Device Terminations

机译:SMT分立器件终端的无介质高效电镀

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摘要

Metalized end terminations of ceramic surface mount discrete devices can be electroplated with solders or other metals with a high process efficiency and yield, and with a high degree of plating deposit thickness control without requiring the use of supplementary conductive media.rnThis can be accomplished through the use of the cylindrical rotary cathode electroplating cell found in the RFT (rotary flow through) plating tool to generate a homogeneous fluidized bed dispersion of devices and plating electrolyte .rnThis presentation details the mechanics of the RFT technology and describes how eliminating the need for conductive media during plating facilitates a higher degree of plating deposition process control while electroplating isolated ceramic capacitor and resistor end terminations. A more predictable mean deposit thickness and uniform coefficient of variance is achieved by continuous automated process monitoring and management of key process inputs expressed as a function of the total device metalization termination surface area.
机译:陶瓷表面贴装分立器件的金属化端接端子可以使用焊料或其他金属进行电镀,从而具有较高的工艺效率和良率,并且可以在不使用辅助导电介质的情况下实现高度的镀层沉积厚度控制。使用RFT(旋转流过)电镀工具中的圆柱形旋转阴极电镀池以产生均匀的设备和电镀电解液流化床分散液。rn本演示文稿详细介绍了RFT技术的原理并描述了如何消除对导电介质的需求在电镀过程中,可实现更高程度的电镀沉积过程控制,同时电镀隔离的陶瓷电容器和电阻器终端。通过连续自动过程监控和关键工艺输入的管理(表示为总器件金属化终止表面积的函数),可以实现更可预测的平均沉积厚度和均匀的方差系数。

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